A short history of pattern effects in thermal processing

Materials Science Forum

Volumn 573-574, Issue , 2008, Pages 355-374

  Timans, P J ^a  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Annealing; Emissivity; Ion implantation; Laser annealing; Millisecond annealing; Pattern effects; Radiative heating; Rapid thermal processing; Silicon; Temperature uniformity; Thermal radiation

Indexed keywords

ANNEALING; CLOSED LOOP CONTROL SYSTEMS; HEAT RADIATION; ION IMPLANTATION; OPTICAL PROPERTIES; PROCESS CONTROL; PULSED LASERS; RADIANT HEATING; RADIATION EFFECTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR LASERS; SILICON;

EMISSIVITY; LASER ANNEALING; MILLISECOND ANNEALING; PATTERN EFFECT; RADIATIVE HEATING; TEMPERATURE UNIFORMITY;

SILICON WAFERS;

EID: 45749114978     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.573-574.355     Document Type: Article

References (78)

1. C. Hill: Mater. Res. Soc. Symp. Proc. Vol. 1 (1981), p. 361.
2. C. Hill: Mater. Res. Soc. Symp. Proc. Vol. 13 (1983), p. 381.
3. P.J. Timans, in: Handbook of Semiconductor Manufacturing Technology, edited by R. Doering and Y. Nishi, (CRC Press, Boca Raton, 2008) p. 11-1.
4. P.J. Timans: Mater. Sci. in Semiconduct. Processing Vol. 1 (1998), p. 169.
5. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2004, Portland, OR, ISBN 0-7803-8477-6, (2004), p. 3.
6. I. Ahsan, N. Zamdmer, O. Glushchenkov, R. Logan, E.J. Nowak, H. Kimura, J. Zimmerman, G. Berg ,J. Herman, E. Maciejewski, A. Chan, A. Azuma, S. Deshpande, B. Dirahoui, G. Freeman, A. Gabor, M. Gribelyuk, S. Huang, M. Kumar, K. Miyamoto, D. Mocuta, A. Mahorowala, E. Leobandung, H. Utomo, B. Walsh: 2006 Symp. VLSI Technol. Dig. Tech. Papers (2006), p. 170.
7. Th. Feudel, B. Bayha, G. Burbach, M. Gerhardt, L. Herrmann, M. Herden, T. Mantei, E. Ehrichs, D. Greenlaw, M. Horstmann: ECS Transactions Vol. 6(1) (2007), p. 373.
8. K.J. Kuhn: IEDM Tech. Dig. (2007), p. 471.
9. P.J. Timans, in: Advances in Rapid Thermal and Integrated Processing edited by F. Roozeboom (Kluwer Academic Publishers, Dordrecht, 1996), p. 35.
10. H. Tamura, M. Miyao and T. Tokuyama: J. Appl. Phys. Vol. 50 (1979), p. 3783.
11. A.B. Fowler and R. T. Hodgson: Appl. Phys. Lett. Vol. 36 (1980), p. 914.
12. H. Okabayashi, M. Yoshida, K. Ishida, T. Yamane: Appl. Phys. Lett. Vol. 36 (1980), p. 202.
13. T.C Teng, Y. Shiau, Y.S. Chen, C Skinner, J.D. Peng, L.J. Palkuti: Mater. Res. Soc. Symp. Proc. Vol. 1 (1981), p. 391.
14. D.L. Kwong and D.M. Kim: J. Appl. Phys. Vol. 54 (1983), p. 366.
15. T.E. Seidel, D.J. Lischner, C.S. Pai, S.S. Lau: J. Appl. Phys. Vol. 57 (1985), p. 1317.
16. Y. Ohno, S. Kitajo, I. Moriyama: 1985 Symp. VLSI Technol. Dig. Tech. Papers (1985), p. 86.
17. C. Hill, S. Jones and D. Boys, in: Reduced Thermal Processing for ULSI, edited by R. A. Levy (Plenum Press, New York, 1989), p. 143.
18. R. Kakoschke and E. Bussmann: Mater. Res. Soc. Symp. Proc. Vol. 146 (1989), p. 473.
19. R. Kakoschke, E. Bussmann and H. Foil: Appl. Phys. A Vol. 50 (1990), p. 141.
20. R. Kakoschke: Mater. Res. Soc. Proc. Vol. 224 (1991), p. 159.
21. P. Vandenabeele: Ph. D. Dissertation, "Rapid Thermal Processing: study of temperature nonuniformity and temperature measurement", Catholic University of Leuven, (1994).
22. P. Vandenabeele and K. Maex: Proceedings of SPIE Vol. 1189 (1989), p. 89.
23. P. Vandenabeele, K. Maex and R. De Keersmaecker: Mater. Res. Soc. Symp. Proc. Vol. 146 (1989), p. 149.
24. P. Vandenabeele and K. Maex: Proceedings of SPIE Vol. 1393 (1990), p. 372.
25. P. Vandenabeele and K. Maex: Mater. Res. Soc. Symp. Proc. Vol. 224 (1991), p. 185.
26. W. Eichhammer, P. Vandenabeele and K. Maex: Mater. Res. Soc. Symp. Proc. Vol. 224 (1991), p. 487.
27. J. P. Hebb and K. F. Jensen: J. Electrochem. Soc. Vol. 143 (1996), p. 1142.
28. [28]J. P. Hebb and K. F. Jensen: Mater. Res. Soc. Symp. Proc. Vol. 429 (1996), p. 43.
29. J. P. Hebb, K. F. Jensen and E. Egan: Mater. Res. Soc. Symp. Proc. Vol. 397 (1995), p. 21.
30. A. Kersch, T. Schafbauer and L. Deutschmann: Mater. Res. Soc. Symp. Proc. Vol. 429 (1996), p. 71.
31. A. Kersch: Mater. Res. Soc. Symp. Proc. Vol. 470 (1997), p. 159.
32. rd International Rapid Thermal Conference - RTP'95, Amsterdam, NL, ISBN 09638251-3-5, (1995), p. 58.
33. R. Bremensdorfer, S. Marcus and Z. Nenyei: Mater. Res. Soc. Symp. Proc. Vol. 429 (1996), p. 327.
34. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP'99, Colorado Springs, CO, ISBN 0-9638251-5-1, (1999), p. 26.
35. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2001, Anchorage, AL, ISBN 0-9638251-0-4, (2001), p. 71.
36. Z. Nényei, J. Niess, S. Buschbaum, K. Meyer, W. Dietl, R. Berger, S. Miethaner, H. Gruber, R. Wahlich, S. Chamberlain: Electrochem. Soc. Proc. Vol. 2002-11 (2002), p. 261.
37. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP 2002, Vancouver, Canada, ISBN 0-7803-7465-7, (2002), p. 49.
38. P. J. Timans, Z. Nényei and R. Berger: Solid State Technology Vol. 45 (2002), p. 67.
39. J. Niess, Z. Nényei, W. Lerch, S. Paul: Electrochem. Soc. Proc. Vol. 2003-14 (2003), p. 11.
40. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP 2006, Kyoto, Japan, ISBN 1-4244-0648-X, (2006), p. 177.
41. P.Y. Wong, C.K. Hess and I.N. Miaoulis: Mater. Res. Soc. Symp. Proc. Vol. 303 (1993), p. 217.
42. P.Y. Wong, I.N. Miaoulis and C.G. Madras: Mater. Res. Soc. Symp. Proc. Vol. 387 (1995), p. 15.
43. st Intl. Rapid Thermal Processing Conference - RTPl993, Scottsdale, AZ, ISBN 0-9638251-1-9, (1993), p. 114.
44. nd Intl. Rapid Thermal Processing Conference - RTP'94, Monterey, CA, ISBN 0-9638251-2-7, (1994), p. 52.
45. P. Spence, C Schaper and A. Kermani: Mater. Res. Soc. Symp. Proc. Vol. 387 (1995), p. 75.
46. rd Intl. Rapid Thermal Processing Conference - RTP'95, Amsterdam, Netherlands, ISBN 09638251-3-5, (1995), p. 181.
47. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP'96, Boise, ID, ISBN 0-9638251-4-3, (1996), p. 342.
48. M.E. Lefrancois, D.M. Camm and B.J. Hickson: Mater. Res. Soc. Symp. Proc. Vol. 429 (1996), p. 321.
49. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP'96, Boise, ID, ISBN 0-9638251-4-3, (1996), p. 417.
50. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2002, Vancouver, Canada, ISBN 0-7803-7465-7, (2002), p. 69.
51. M. Rabus, A. T. Fiory, N. M. Ravindra, P. Frisella, A. Agarwal, T. Sorsch, J. Miner, E. Ferry, F. Klemens, R. Cirelli, W. Mansfield: J. Electron. Mater. Vol. 35 (2006), p. 877.
52. In Ref. [21], p. 45.
53. H.A. Lord: IEEE Trans. Semiconduct. Manufact. Vol. 1 (1988), p. 105.
54. P. Timans, J. Gelpey, S. McCoy, W. Lerch, S. Paul: Mater. Res. Soc. Symp. Proc. Vol. 912 (2006), p. 3.
55. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2004, Portland, OR, ISBN 0-7803-8477-6, (2004), p. 99.
56. W. Lerch, S. Paul, J. Niess, S. McCoy, T. Selinger, J. Gelpey, F. Cristiano, F. Severac, M. Gavelle, S. Boninelli, P. Pichler, D. Bolze: Mater. Sci. Eng. B Vol. 124-125 (2005), p. 24.
57. N. Acharya and P.J. Timans: Electrochem. Soc. Proc. Vol. 2004-01 (2004), p. 11.
58. nd Edition, (2004), p. 83.
59. S. Talwar, D. Markle and M. Thompson: Solid State Technology Vol. 46 (2003), p. 83.
60. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2005, Santa Barbara, CA, ISBN 0-7803-9223-X, (2005), p. 105.
61. th International Workshop on Junction Technology, (Jap. Soc. Appl. Phys., 2005), p. S4-3.
62. C.-H. Chen, C.F. Nieh, D.W. Lin, K.C. Ku, J.C. Sheu, M.H. Yu, L.T. Wang, H.H. Lin, H. Chang, T.L. Lee, K. Goto, C.H. Diaz, S.C. Chen, M.S. Liang: 2006 Symp. VLSI Technol. Dig. Tech. Papers (2006), p. 174.
63. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2005, Santa Barbara, CA, ISBN 0-7803-9223-X, (2005), p. 149.
64. T. Sanuki, T. Iwamoto, K. Ota, T. Komoda, H. Yamazaki, A. Eiho, K. Miyagi, K. Nakayama, O. Fuji, M. Togo, K. Ohno, H. Yoshimura, K. Yoshida, T. Ito, A. Mineji, K. Yoshino, T. Itani, K. Matsuo, T. Sato, S. Mori, K. Nakazawa, M. Nakazawa, T. Shinyama, K. Suguro, I. Mizushima, S. Iwasa, S. Muramatsu, K. Nagaoka, M. Ikeda, M. Saito, H. Naruse, Y. Enomoto, T. Kitano, M. Iwai, K. Imai, N. Nagashima, T. Kuwata, F. Matsuoka: IEDM Tech. Dig. (2007), p. 281.
65. M.M. Mansoori, A. Jain, D.E. Mercer, L. Robertson, P. Kohli: Electrochem. Soc. Proc. Vol. 2002-11 (2002), p. 389.
66. G. Fortunato, L. Mariucci, M. Stanizzi, V. Privitera, S. Whelan, C Spinella, G. Mannino, M. Italia, C Bongiorno, A. Mittiga: Nucl. Instrum. and Meth. in Phys. Res. B Vol. 186 (2002), p. 401.
67. K. Sadra and H.-F. Ji: J. Vac. Sci. Technol. B Vol. 16 (1998), p. 116.
68. K.-C. Park, W.-J. Nam, S.-H. Kang, M.-K. Han: Electrochem. and Solid-State Lett. Vol. 7 (2004), p. G116.
69. A. Shima, H. Ashihara, A. Hiraiwa, T. Mine, Y. Goto: IEEE Trans. Electron Dev. Vol. 52 (2005), p. 1165.
70. P.J. Timans: Mater. Res. Soc. Symp. Proc. Vol. 429 (1996), p. 3.
71. Y.-B. Chen, Z.M. Zhang and P. J. Timans: J. Heat Transfer Vol. 129 (2007), p. 79.
72. J.P. Hebb, K.F. Jensen and J. Thomas: IEEE Trans. Semiconduct. Manufact. Vol. 11 (1998), p. 607.
73. M. Hernandez, J. Venturini, D. Berard, G. Kerrien, T. Sarnet, D. Débarre, J. Boulmer, C. Laviron, D. Camel, J.-L. Santailler, H. Akhouayri: Mater. Sci. and Eng. B Vol. 114-115 (2004), p. 105.
74. P. Stancavage: Micro-Magazine Vol. 7/8 (2002), p. 71.
75. E.H.A. Granneman, H. Terhorst, K. Funk, A. Falepin, E. Rosseel, K. Verheyden, K. Vanormelingen, H. Bourdon, A. Halimaoui: ECS Transactions Vol. 3(2) (2006), p. 85.
76. Z. Koren, C.P. O'Carroll, S.C Choy, P.J. Timans, R.S.T. Cardema, J.T. Taoka, A.A. Strod, US Patent 6,970,644 (2005).
77. P.J. Timans, US Patent 7,015,422 (2006).
78. J.C. Carter, A.G.R. Evans, P.J. Timans, J.M.C England: J. Vac. Sci. Technol. B Vol. 9 (1991), p. 1944.