Selected two-dimensional effects in gas immersion laser doping of unpatterned silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 116-120

  Sadra, K ^a,b   Ji, H F ^a  

^a University of Missouri   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644325569     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589764     Document Type: Article

References (20)

1. B. El-Kareh, J. Vac. Sci. Technol. B 12, 172 (1994).
2. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, 1994).
3. See, for example, A. F. Tasch and S. K. Banerjee, Nucl. Instrum. Methods Phys. Res. B 112, 177 (1996); H. Jiang, C. M. Osburn, P. Smith, Z.-G. Xiao, D. Griffis, G. McGuire, and G. A. Rozgonyi, J. Electrochem. Soc. 139, 196 (1992); V. Probst. H. Schaber, A. Mitwalski, H. Kabza, L. van den Hove, and K. Maex, J. Appl. Phys. 70, 708 (1991); S. S. Wong, D. R. Bradbury, D. C. Chen, and K. Y. Chio, Tech. Dig. Int. Electron Devices Meet. 634 (1984).
4. See, for example, A. F. Tasch and S. K. Banerjee, Nucl. Instrum. Methods Phys. Res. B 112, 177 (1996); H. Jiang, C. M. Osburn, P. Smith, Z.-G. Xiao, D. Griffis, G. McGuire, and G. A. Rozgonyi, J. Electrochem. Soc. 139, 196 (1992); V. Probst. H. Schaber, A. Mitwalski, H. Kabza, L. van den Hove, and K. Maex, J. Appl. Phys. 70, 708 (1991); S. S. Wong, D. R. Bradbury, D. C. Chen, and K. Y. Chio, Tech. Dig. Int. Electron Devices Meet. 634 (1984).
5. See, for example, A. F. Tasch and S. K. Banerjee, Nucl. Instrum. Methods Phys. Res. B 112, 177 (1996); H. Jiang, C. M. Osburn, P. Smith, Z.-G. Xiao, D. Griffis, G. McGuire, and G. A. Rozgonyi, J. Electrochem. Soc. 139, 196 (1992); V. Probst. H. Schaber, A. Mitwalski, H. Kabza, L. van den Hove, and K. Maex, J. Appl. Phys. 70, 708 (1991); S. S. Wong, D. R. Bradbury, D. C. Chen, and K. Y. Chio, Tech. Dig. Int. Electron Devices Meet. 634 (1984).
6. See, for example, A. F. Tasch and S. K. Banerjee, Nucl. Instrum. Methods Phys. Res. B 112, 177 (1996); H. Jiang, C. M. Osburn, P. Smith, Z.-G. Xiao, D. Griffis, G. McGuire, and G. A. Rozgonyi, J. Electrochem. Soc. 139, 196 (1992); V. Probst. H. Schaber, A. Mitwalski, H. Kabza, L. van den Hove, and K. Maex, J. Appl. Phys. 70, 708 (1991); S. S. Wong, D. R. Bradbury, D. C. Chen, and K. Y. Chio, Tech. Dig. Int. Electron Devices Meet. 634 (1984).
7. T. F. Deutsch, D. J. Ehrlich, R. M. Osgood, and Z. L. Liau, Appl. Phys. Lett. 36, 847 (1980).
8. P. G. Carey, T. W. Sigmon, R. L. Press, and T. S. Fahlen, IEEE Trans. Electron Devices EDL-6, 291 (1985).
9. F. Foulon, A. Slaoui, E. Fogarassy, R. Stuck, C. Fuchs, and P. Siffert, Appl. Surf. Sci. 36, 284 (1989).
10. S. Kato, H. Saeki, J. Wada, and S. Matsumoto, J. Electrochem. Soc. 135, 1030 (1987).
11. X. Zhang, J. R. Ho, and C. P. Grigoropoulos, Int. J. Heat Mass Transf. 39, 3835 (1996).
12. E. Landi, P. G. Carey, and T. W. Sigmon, IEEE Trans. Comput.-Aided Des. 7, 205 (1988).
13. S. Inui, T. Nii, and S. Matsumoto, IEEE Electron Device Lett. 12, 702 (1991).
14. E. Ishida, T. W. Sigmon, K. H. Weiner, and M. R. Frost, J. Vac. Sci. Technol. B 12, 399 (1994).
15. K.-J. Kramer, S. Talwar, I. T. Lewis, J. E. Davison, K. A. Williams, K. A. Benton, and K. H. Weiner, Appl. Phys. Lett. 68, 2320 (1996).
16. See, for example, T. M. Bloomstein and D. J. Ehrlich, Appl. Phys. Lett. 61, 708 (1992); G. V. Treyz, R. Beach, and R. M. Osgood, Jr., J. Vac. Sci. Technol. B 6, 37 (1988); M. Mullenborn, H. Dirac, and J. W. Peterson, Appl. Surf. Sci. 86, 568 (1995).
17. See, for example, T. M. Bloomstein and D. J. Ehrlich, Appl. Phys. Lett. 61, 708 (1992); G. V. Treyz, R. Beach, and R. M. Osgood, Jr., J. Vac. Sci. Technol. B 6, 37 (1988); M. Mullenborn, H. Dirac, and J. W. Peterson, Appl. Surf. Sci. 86, 568 (1995).
18. See, for example, T. M. Bloomstein and D. J. Ehrlich, Appl. Phys. Lett. 61, 708 (1992); G. V. Treyz, R. Beach, and R. M. Osgood, Jr., J. Vac. Sci. Technol. B 6, 37 (1988); M. Mullenborn, H. Dirac, and J. W. Peterson, Appl. Surf. Sci. 86, 568 (1995).
19. K. H. Weiner, Ph. D. dissertation, Stanford University, 1989.
20. W. E. Beadle, J. C. C. Tsai, and R. D. Plummer, Quick Reference Manual for Silicon Integrated Circuit Technology (Wiley, New York, 1985).