Pyrometry for laser annealing

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Volumn , Issue , 2005, Pages 105-109

  Adams, Bruce ^a   Mayur, Abhilash ^a   Hunter, Aaron ^a   Ramanujam, Rajesh ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

45NM TECHNOLOGIES; CLOSED LOOPS; CLOSED-LOOP CONTROLS; DEVICE WAFERS; DOPANT ACTIVATIONS; LASER ANNEALING; PROCESS SOLUTIONS; SHALLOW JUNCTIONS; TECHNICAL CHALLENGES; TEMPERATURE VARIATIONS; WAFER SURFACES;

ANNEALING; CLOSED LOOP CONTROL SYSTEMS; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; LASERS; OPTICAL PROPERTIES; PYROMETERS; PYROMETRY; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE MEASURING INSTRUMENTS;

SEMICONDUCTOR LASERS;

EID: 34147161992     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2005.1613690     Document Type: Conference Paper

References (4)

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2. th Meeting, Toronto, Vol 2000-1, 526, (2000)
3. th IEEE International Conference on Advanced Thermal Processing of Semiconductors, Portland, OR pp 47-51, Sept 28-30, 2004
4. Mielenz D., Sauders R., Parr A., Hsia J., "The 1990 NIST Scales of Thermal Radiometry", J. Research NIST 95pp 621-629 (1990)