Reduction of pattern effects in RTP Centura system

10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Volumn , Issue , 2002, Pages 69-73

  Aderhold, W ^a   Poarch, S ^a   Hunter, A ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; OPTICAL PROPERTIES; SUBSTRATES; TEMPERATURE; TEMPERATURE CONTROL; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

APPLIED MATERIALS; LOCAL TEMPERATURE; PATTERNED WAFERS; PRODUCTION ENVIRONMENTS; SEMICONDUCTOR SUBSTRATE; TEMPERATURE DIFFERENCES; TEMPERATURE MEASUREMENT SYSTEMS; WAFER TEMPERATURE;

SILICON WAFERS;

EID: 84962456184     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2002.1039441     Document Type: Conference Paper

References (6)

1. Z. Nenyei, A. Geschwandtner, S. Markus, "How to manage the Pattern Challenge", in 3rd Conf. on Advanced Thermal Processing of Semiconductors - RTP'95, ed. R.B. Fair, B. Lojek, 1995, p. 58
2. th IEEE Int. Conf. on Advanced Thermal processing of Semicondcutors - RTP2002, ed. J. Gelpey, B. Lojek. Z. Nenyei, R. Singh, Vancouver, 2002
3. P.J. Timans, Z. Nenyei, R. Berger, "Device Scaling Drives Pattern Effect Solution", Solid State Technology, May 2002, p. 67-72
4. B. Peuse, G. Miner, M. Yam, C. Ellia, "Advances in RTP temperature measurement and control", MRS Soc. Symp. 1998
5. M. Yam, A. Hunter, "Apparatus and Method for Measuring Substrate Temperature", US6007241
6. Saritas, M, et. al, "Absorption coefficient of silicon in the wavelength range between 0.8 and 1.16 um", J. Appl Phys, 61 (10), 15 May 1987