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Volumn , Issue , 2004, Pages 99-108

Advanced doping and millisecond annealing for ultra-shallow junctions for 65nm and beyond

Author keywords

[No Author keywords available]

Indexed keywords

FLASHLIGHTS; ION IMPLANTATION; OPTIMIZATION; SILICON WAFERS;

EID: 27844512692     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (8)
  • 4
  • 5
    • 3543129928 scopus 로고    scopus 로고
    • Advanced annealing for sub 130nm junction formation
    • Pennington, NJ
    • J.C. Gelpey et al., Advanced Annealing for sub 130nm Junction Formation, Electrochemical Society Proceedings PV 2002-11, page 313 (Pennington, NJ, 2002)
    • (2002) Electrochemical Society Proceedings , vol.PV 2002-11 , pp. 313
    • Gelpey, J.C.1
  • 7
    • 28344443592 scopus 로고    scopus 로고
    • Flash assist RTP USJ source drain extension formation and characterization
    • S.P. McCoy et al., Flash Assist RTP USJ Source Drain Extension Formation and Characterization, Ultra Shallow Junctions, 2003 (2003), pg 104
    • (2003) Ultra Shallow Junctions , vol.2003 , pp. 104
    • McCoy, S.P.1
  • 8
    • 11044229556 scopus 로고    scopus 로고
    • Metastable boron active concentrations in Si using flash assisted solid phase epitaxy
    • submitted
    • S. H. Jain et al., Metastable Boron Active Concentrations in Si using Flash Assisted Solid Phase Epitaxy, submitted to Journal of Applied Physics
    • Journal of Applied Physics
    • Jain, S.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.