Pattern effects with the mask off

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 177-191

  Nenyei, Z ^a   Niess, J ^a   Lerch, W ^a   Dietl, W ^a   Timans, P J ^b   Pichler, P ^c  

^a Mattson Thermal Products GmbH   (Germany)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLACK BODIES; CD VARIATIONS; COATING MATERIALS; DEVICE PRODUCTIONS; DIRECT MEASUREMENTS; ELECTRICAL PARAMETERS; IMPLANT PARAMETERS; IN PROCESSES; MAXIMUM TEMPERATURES; MICROLOADING EFFECTS; PARAMETER DISTRIBUTIONS; PATTERN EFFECTS; PEAK TIMES; PLASMA ETCH; PRODUCTION WAFERS; RAMP RATES; ROOT CAUSES; SPIKE ANNEALING;

CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33846220196     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.367998     Document Type: Conference Paper

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