The effect of surface roughness on the radiative properties of patterned silicon wafers

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 4, 1998, Pages 607-614

  Hebb, Jeffrey P ^a   Jensen, Klavs F ^b   Thomas, Jack ^c  

^a EATON CORPORATION   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

Pattern effects; Photon radiation effects; Process model; Rough surfaces; Thin film optics

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIES; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS; SURFACES; TEMPERATURE; TEMPERATURE MEASUREMENT;

PROCESS MODEL; RADIATIVE PROPERTY; RAPID THERMAL PROCESSING; THIN FILM OPTICS;

SILICON WAFERS;

EID: 0032205186     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.728558     Document Type: Article

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