Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 150-155

  Lenahan, P M ^a   Mele, J J ^a   Campbell, J P ^a   Kang, A Y ^a   Lowry, R K ^b   Woodbury, D ^b   Liu, S T ^c   Weimer, R ^d  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INTERSIL CORPORATION   (United States)

^c HONEYWELL TECHNOLOGY CENTER   (United States)

^d MICRON TECHNOLOGY INC   (United States)

Author keywords

Atomic measurements; Bonding; Integrated circuit measurements; Joining processes; Leakage current; Paramagnetic resonance; Semiconductor thin films; Silicon compounds; Thermal stresses; Thin film circuits

Indexed keywords

BONDING; DANGLING BONDS; DEFECTS; INTERFACE STATES; LEAKAGE (FLUID); MAGNETIC MOMENTS; METALS; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; SILICON COMPOUNDS; SILICON OXIDES; TEMPERATURE; THERMAL STRESS; THIN FILM CIRCUITS; THIN FILMS;

ATOMIC MEASUREMENTS; ELECTRON SPIN RESONANCE MEASUREMENTS; EXPERIMENTAL EVIDENCE; INTEGRATED CIRCUIT MEASUREMENTS; JOINING PROCESS; SEMICONDUCTOR THIN FILMS; SILICON DANGLING BOND; STRESS-INDUCED LEAKAGE CURRENT;

LEAKAGE CURRENTS;

EID: 84949800528     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922894     Document Type: Conference Paper

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