Plasma charging damage on ultrathin gate oxides

IEEE Electron Device Letters

Volumn 19, Issue 1, 1998, Pages 1-3

  Park, Donggun ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Charging damage; Diode protection; Oxide scaling; Reliability; Thin gate oxide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DEVICE MANUFACTURE; ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; REACTIVE ION ETCHING; RELIABILITY; SEMICONDUCTOR PLASMAS;

ELLIPSOMETER; PLASMA CHARGING DAMAGE; THIN GATE OXIDE; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0031646677     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.650333     Document Type: Article

References (10)

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