Evaluation of interface SiOx transition layer in ultrathin SiO2 film by oscillatory tunneling current-voltage characteristics in photo-CVD SiO2-Si diode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2341-2344

  Maida, Osamu ^a   Okada, Norio ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Fowler Nordheim tunneling current; Interface transition layer; Photo CVD; Si SiO2 interface; UV O2 annealing

Indexed keywords

EID: 19444368100     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2341     Document Type: Article

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