Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2122-2126

  Hoshii, Takuya ^a   Sugahara, Satoshi ^b   Takagi, Shin Ichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Barrier height; Fowler Nordheim tunneling; Gate current; MOSFETs; Strain

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; TENSILE STRAIN;

BARRIER HEIGHT; FOWLER-NORDHEIM TUNNELING; GATE CURRENT;

MOSFET DEVICES;

EID: 34547863961     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2122     Document Type: Article

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