Gate leakage mechanisms in strained Si devices

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Yan, L ^a   Olsen, S H ^a   Kanoun, M ^a   Agaiby, R ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFUSION; ELECTRIC FIELDS; EPITAXIAL GROWTH; GERMANIUM; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS;

ENERGY BAND STRUCTURE; GATE LEAKAGE MECHANISMS; GATE OXIDE LEAKAGE; GATE OXIDES;

MOSFET DEVICES;

EID: 33845198102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2374191     Document Type: Article

References (33)

1. A. Shimizu, K. Hachimine, N. Ohki, H. Ohta, M. Koguchi, Y. Nonaka, H. Sato, and F. Ootsuka, Tech. Dig. - Int. Electron Devices Meet. 2001, 433-436.
2. K. Ota, K. Sugihara, H. Sayama, T. Uchida, H. Oda, T. Eimorim, H. Morimoto, and Y. Inoue, Tech. Dig. - Int. Electron Devices Meet. 2002, 27-30.
3. V. Chan, Tech. Dig. - Int. Electron Devices Meet. 2003, 77-80.
4. C. H. Ge, Tech. Dig. - Int. Electron Devices Meet. 2003, 73-76.
5. S. E. Thompson, IEEE Trans. Electron Devices 51, 1790 (2004).
6. E. A. Fitzgerald, Y. H. Xie, M. L. Green, D. Brasen, A. R. Kortan, J. Michel, Y.-J. Mii, and B. E. Weir, Appl. Phys. Lett. 59, 811 (1991).
7. D. Wang, M. Ninomiya, M. Nakamae, and H. Nakashima, Appl. Phys. Lett. 86, 122111 (2005).
8. N. R. Zangenberg, J. Fade-Pedersen, J. L. Hansen, and A. N. Larsen, J. Appl. Phys. 94, 3883 (2003).
9. F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyerson, J. Appl. Phys. 65, 1724 (1989).
10. S. B. Samavedam, W. J. Taylor, J. M. Grant, J. A. Smith, P. J. Tobin, A. Dip, A. M. Phillips, and R. Liu, J. Vac. Sci. Technol. B 17, 1424 (1999).
11. S. Y. Shiryaev, F. Jensen, and J. W. Petersen, Appl. Phys. Lett. 64, 3305 (1994).
12. S. H. Olsen, Semicond. Sci. Technol. 19, 707 (2004).
13. S. Takagi, Tech. Dig. - Int. Electron Devices Meet. 2003, 57-60.
14. M. T. Currie, C. W. Leitz, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, J. Vac. Sci. Technol. B 19, 2268 (2001).
15. S. H. Olsen, IEEE Trans. Electron Devices 51, 1156 (2004).
16. K. Rim, VLSI Technology, 2002, Digest of Technical Papers, p. 98-99.
17. K. S. K. Kwa, S. Chattopadhyay, S. H. Olsen, L. S. Driscoll, and A. G. O'Neill, in Proc. ESSDERC, Estoril, Portugal, p. 501-504 (2003).
18. L. K. Bera, Thin Solid Films 462, 85 (2004).
19. Y. X. Lin, M. C. Öztürk, B. Chen, S. J. Rhee, J. C. Lee, and V. Misra, Appl. Phys. Lett. 87, 071903 (2005).
20. G. K. Dalapati, IEEE Trans. Electron Devices 53, 1142 (2006).
21. S. H. Olsen, A. G. O'Neill, S. Chattopadhyay, L. S. Driscoll, K. S. K. Kwa, D. J. Norris, A. G. Cullis, and D. J. Paul, IEEE Trans. Electron Devices 51, 1245 (2004).
22. W. Zhao, A. Seabaugh, V. Adams, D. Jovanovic, and B. Winstead, IEEE Electron Device Lett. 26, 410 (2005).
23. S. G. Badcock, A. G. O'Neill, and E. G. Chester, Solid-State Electron. 46, 1925 (2002).
24. S. H. Olsen, A. G. O'Neill, S. Chattopadhyay, K. S. K. Kwa, L. S. Driscoll, J. Zhang, D. J. Robbins, and V. Higgs, J. Appl. Phys. 94, 6855 (2003).
25. M. Griglione, T. J. Anderson, Y. M. Haddara, M. E. Law, K. S. Jones, and A. V. D. Bogaard, J. Appl. Phys. 88, 1366 (2000).
26. H. Sunamura, S. Fukatsu, N. Usami, and Y. Shiraki, Jpn. J. Appl. Phys., Part 1 33, 2344 (1994).
27. D. J. Paul, Semicond. Sci. Technol. 19, R75 (2004).
28. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
29. S.-G. Lee, Mater. Sci. Semicond. Process. 8, 215 (2005).
30. C. W. Leitz, M. T. Currie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, J. Appl. Phys. 92, 3745 (2002).
31. S. Persson, D. Wu, P.-E. Hellström, S.-L. Zhang, and M. Östling, Solid-State Electron. 48, 721 (2004).
32. W. A. Hill and C. C. Coleman, Solid-State Electron. 23, 987 (1980).
33. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era Volume 1: Process Technology (Lattice, Sunset Beach, California, 1986).