Evaluation of strained Si/SiGe material for high performance CMOS

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 707-714

  Olsen, S H ^a   O'Neill, A G ^a   Chattopadhyay, S ^a   Kwa, K S K ^a   Driscoll, L S ^a   Norris, D J ^b   Cullis, A G ^b   Robbins, D J ^c   Zhang, J ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c QINETIQ   (United Kingdom)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HIGH TEMPERATURE EFFECTS; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

CONDUCTION BAND; DEFECT DENSITY; DRAIN CURRENT; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2942627308     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/008     Document Type: Article

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