Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

IEEE Electron Device Letters

Volumn 21, Issue 11, 2000, Pages 540-542

  Yeo, Yee Chia ^a   Lu, Qiang ^a   Lee, Wen Chin ^a,c,d   King, Tsu Jae ^a   Hu, Chenming ^a   Wang, Xiewen ^b   Guo, Xin ^b,e   Ma, T P ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Yale University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d INTEL CORPORATION   (United States)

^e ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); HOLE MOBILITY; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICON NITRIDE; VAPOR DEPOSITION;

DIRECT TUNNELING; GATE CURRENT; HOLE TUNNELING; JET VAPOR DEPOSITION; SEMIEMPIRICAL MODEL;

MOSFET DEVICES;

EID: 0034318446     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.877204     Document Type: Article

References (10)

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