The contribution of HFO 2 bulk oxide traps to dynamic NBTI in PMOSFET'S

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 533-537

  Zhu, B ^a   Suehle, J S ^b   Vogel, E ^b   Bernstein, J B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Bulk oxide traps; Hafnium oxide; High k gate dielectrics; Negative bias temperature instability

Indexed keywords

BULK OXIDE TRAPS; HAFNIUM OXIDE; HIGH-K GATE DIELECTRICS; NEGATIVE BIAS TEMPERATURE INSTABILITY;

ACCELERATION; DIELECTRIC MATERIALS; EXTRAPOLATION; FREQUENCY RESPONSE; HAFNIUM COMPOUNDS; PARAMETER ESTIMATION; STRESS ANALYSIS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 28744458787     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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