Observations of NBTI-induced atomic scale defects

IEEE International Integrated Reliability Workshop Final Report

Volumn 2005, Issue , 2005, Pages 1-4

  Campbell, J P ^a   Lenahan, P M ^a   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL DEFECTS; DIODES; PARAMAGNETIC RESONANCE; SILICON COMPOUNDS;

DC-IV MEASUREMENTS; OXIDE SILICON;

MOSFET DEVICES;

EID: 33847726238     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2005.1609551     Document Type: Conference Paper

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