Atomic scale defects involved in NBTI

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 118-120

  Campbell, J P ^a   Lenahan, P M ^a   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON TRAPS; INTERFACES (MATERIALS); NETWORKS (CIRCUITS); PARAMAGNETIC RESONANCE; SILICA; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

BOND DEFECTS; INTERFACE TRAPS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); SPIN DEPENDENT RECOMBINATION (SDR);

MOSFET DEVICES;

EID: 21644489729     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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