BTI characteristics and mechanisms of metal gated HfO2 films with enhanced Interface/Bulk Process Treatments

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 26-34

  Kalpat, Sriram ^a   Tseng, Hsing Huang ^a   Ramon, Michael ^a   Moosa, Mohamed ^a   Tekleab, Daniel ^a   Tobin, Philip J ^a   Gilmer, David C ^a   Hegde, Rama I ^a   Capasso, C ^a   Tracy, Clarence ^a   White Jr , Bruce E ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

BTI; HfO2; Reliability models

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOSFET DEVICES; RELIABILITY; SILICA; THRESHOLD VOLTAGE;

BIAS TEMPERATURE INSTABILITY (BTI); GATE OXIDES; HFO2; METAL GATES; RELIABILITY MODELS;

DIELECTRIC FILMS;

EID: 20444499037     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845879     Document Type: Article

References (11)

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