Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3677-3679

  Fujieda, Shinji ^a   Miura, Yoshinao ^a   Saitoh, Motofumi ^a   Hasegawa, Eiji ^b   Koyama, Shin ^b   Ando, Koichi ^b  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRIC CONDUCTANCE; INTERFACES (MATERIALS); PARAMAGNETIC RESONANCE; THERMAL STRESS;

NEGATIVE-BIAS TEMPERATURE STRESS (NBTS);

SILICON COMPOUNDS;

EID: 0038306923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578535     Document Type: Article

References (26)

1. K. Watanabe, T. Tatsumi, M. Togo, and T. Mogami, J. Appl. Phys. 90, 4701 (2001).
2. C.-H. Chen, Y.-K. Fang, S.-F. Ting, W.-T. Hsieh, C.-W. Yang, T.-H. Hsu, M.-C. Yu, T.-L. Lee, S.-C. Chen, C.-H. Yu, and M.-S. Liang, IEEE Trans. Electron Devices 49, 840 (2002).
3. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, Symp. VLSI Technology, 2000, p. 92.
4. C.-H. Liu, M. T. Lee, C.-Y. Lin, J. Chen, Y. T. Loh, F.-T. Liou, K. Schruefer, A. A. Katsetos, Z. Yang, N. Rovedo, T. B. Hook, C. Wann, and T.-C. Chen, Jpn. J. Appl. Phys., Part 1 41, 2423 (2002).
5. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, M. Harmatz, W. R. Buchwald, and N. M. Johnson, J. Electrochem. Soc. 136, 2609 (1989).
6. C. E. Blat, E. H. Nicollian, and E. H. Poindexter, J. Appl. Phys. 69, 1712 (1991).
7. Z. Liu, S. Fujieda, K. Terashima, M. Wilde, and K. Fukutani, Appl. Phys. Lett. 81, 2397 (2002).
8. J. Ushio, T. Maruizumi, and K. Kushida-Abdelghafar, Appl. Phys. Lett. 81, 1818 (2002).
9. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai, and T. Horiuchi, Symp. VLSI Technology, 1999, p. 73.
10. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).
11. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley-Interscience, New York, 1982).
12. K. O. Jeppson and C. M. Svensson, J. Appl. Phys. 48, 2004 (1977).
13. S. Ogawa and N. Shiono, Phys. Rev. B 51, 4218 (1995).
14. A. Stesmans and V. V. Afanas'ef, J. Appl. Phys. 83, 2449 (1998).
15. J. H. Stathis, J. Appl. Phys. 77, 6205 (1995).
16. H. J. von Bardeleben, J. L. Cantin, L. G. Gosset, J. J. Ganem, I. Trimaille, and S. Rigo, J. Non-Cryst. Solids 245, 169 (1999).
17. K. Kushida-Abdelghafar, K. Watanabe, T. Kikawa, Y. Kamigaki, and J. Ushio, J. Appl. Phys. 92, 2475 (2002).
18. Y. Miura and S. Fujieda (unpublished).
19. E. Cartier, D. A. Buchanan, J. H. Stathis, and D. J. DiMaria, J. Non-Cryst. Solids 187, 244 (1995).
20. J. M. M. de Nijs, K. G. Druijf, V. V. Afanas'ef, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994).
21. J. P. Campbell and P. M. Lenahan, Appl. Phys. Lett. 80, 1945 (2002).
22. C. G. Van de Walle and R. A. Street, Phys. Rev. B 49, 14766 (1994).
23. B. Tuttle and C. G. Van de Walle, Phys. Rev. B 59, 12884 (1999).
24. M. Houssa, J. L. Autran, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett. 81, 709 (2002).
25. V. V. Afanas'ev and A. Stesmans, Phys. Rev. Lett. 80, 5176 (1998).
26. G. Lucovsky, Z. Jing, and D. R. Lee, J. Vac. Sci. Technol. B 14, 2832 (1996).