Spin-dependent trap-assisted tunneling current in ultra-thin gate dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2840-2843

  Miura, Y ^a   Fujieda, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Electron spin resonance; Gate dielectrics; Leakage current; Silicon nitride; Spin dependent tunneling; Trap assisted current

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; THIN FILMS;

SPIN DEPENDENT TUNNELING (SDT) SPECTROSCOPY; ULTRA-THIN GATE DIELECTRICS;

MOS DEVICES;

EID: 0035300805     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2840     Document Type: Article

References (11)