Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Campbell, J P ^a   Lenahan, P M ^a   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CRYSTAL DEFECTS; ELECTRON TUNNELING; MOSFET DEVICES; NITRIDES; PLASMA DEVICES;

ATOMIC-SCALE DEFECT STRUCTURE; NEGATIVE BIAS TEMPERATURE; PLASMA-NITRIDED DEVICES; TEMPERATURE INSTABILITY;

CRYSTAL STRUCTURE;

EID: 34848838240     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2790776     Document Type: Article

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