Low-energy Nitrogen Plasmas for 65-nm node Oxynitride Gate Dielectrics: A Correlation of Plasma Characteristics and Device Parameters

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 143-144

  Kraus, P A ^a   Ahmed, K ^a   Chua, T C ^a   Ershov, M ^b   Karbasi, H ^b   Olsen, C S ^a   Nouri, F ^a   Holland, J ^a   Zhao, R ^a   Miner, G ^a   Lepert, A ^a  

^a APPLIED MATERIALS INC   (United States)

^b PDF SOLUTIONS INC   (United States)

Author keywords

Effective carrier mobility; Electron temperature; NBTI; Oxynitride gate dielectric; Plasma nitridation

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CONCENTRATION (PROCESS); CONTINUOUS WAVE LASERS; INDUCTIVELY COUPLED PLASMA; NITROGEN; OXIDATION; PLASMA APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY; ALUMINUM NITRIDE; DIELECTRIC MATERIALS; ELECTROMAGNETIC INDUCTION; ELECTRON TEMPERATURE; GATE DIELECTRICS; NEGATIVE BIAS TEMPERATURE INSTABILITY; NITRIDES; PLASMA STABILITY;

GATE DIELECTRICS;

DIELECTRIC MATERIALS; NITROGEN PLASMA;

65-NM-NODE; CHARACTERISTICS PARAMETERS; DEVICE CHARACTERISTICS; DEVICE PARAMETERS; INDUCTIVELY-COUPLED; LOW ENERGY NITROGEN; OXYNITRIDE GATE DIELECTRIC; PLASMA CHARACTERISTICS; PLASMA NITRIDATION; ULTRA-THIN;

EID: 0141761517     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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