Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2

Applied Physics Letters

Volumn 68, Issue 12, 1996, Pages 1669-1671

  Stathis, J H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0001413063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115900     Document Type: Article

References (28)

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