NBTI: An atomic-scale defect perspective

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 442-447

  Campbell, J P ^a   Lenahan, P M ^a   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Interface traps; MOSFET; Negative bias temperature instability; Spindependent recombination

Indexed keywords

DEFECT CENTERS; INTERFACE TRAPS; NEGATIVE BIAS TEMPERATURE INSTABILITY; SPIN DEPENDENT RECOMBINATION;

DANGLING BONDS; DIODES; GATE DIELECTRICS; SILICA; THERMODYNAMIC STABILITY;

MOSFET DEVICES;

EID: 34047240684     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251259     Document Type: Conference Paper

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