Direct observation of the structure of defect centers involved in the negative bias temperature instability

Applied Physics Letters

Volumn 87, Issue 20, 2005, Pages 1-3

  Campbell, J P ^a   Lenahan, P M ^a   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CENTERS; SPIN-DEPENDENT RECOMBINATION; TEMPERATURE INSTABILITY;

CRYSTAL DEFECTS; MOS DEVICES; PARAMAGNETIC RESONANCE; SILICA;

FIELD EFFECT TRANSISTORS;

EID: 27744503541     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2131197     Document Type: Article

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