A spin-dependent recombination study of radiation-induced Pb1 centers at the (001) Si/SiO2 interface

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2249-2255

  Mishima, Tetsuya D ^b   Lenahan, Patrick M ^a,b  

^a IEEE

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FERMI LEVEL; GAMMA RAYS; HOT CARRIERS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MOSFET DEVICES; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; SILICA;

ELECTRICAL ACTIVITY; SPIN DEPENDENT RECOMBINATION;

RADIATION DAMAGE;

EID: 0034450459     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903761     Document Type: Conference Paper

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