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Volumn 28, Issue 2, 1997, Pages 173-182

A review of SOI transistor models

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0031077152     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00078-x     Document Type: Review
Times cited : (1)

References (13)
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    • Current-voltage characteristics of thin-film SOI MOSFETs in strong inversion
    • H. Lim and J.G. Fossum, Current-voltage characteristics of thin-film SOI MOSFETs in strong inversion, IEEE Trans. Electron. Devices, ED-31(4) (1984) 401-407.
    • (1984) IEEE Trans. Electron. Devices , vol.ED-31 , Issue.4 , pp. 401-407
    • Lim, H.1    Fossum, J.G.2
  • 2
    • 0026896303 scopus 로고
    • Scaling the Si MOSFET: From bulk to SOI to bulk
    • R.H. Yan, A. Ourmazd and K.F. Lee, Scaling the Si MOSFET: from bulk to SOI to bulk, IEEE Trans. Electron. Devices, 39(7) (1992) 1704-1710.
    • (1992) IEEE Trans. Electron. Devices , vol.39 , Issue.7 , pp. 1704-1710
    • Yan, R.H.1    Ourmazd, A.2    Lee, K.F.3
  • 3
    • 0024732879 scopus 로고
    • The nonequilibrium inversion layer charge of thin-film SOI MOSFET
    • A. Ortiz-Conde et al., The nonequilibrium inversion layer charge of thin-film SOI MOSFET, IEEE Trans. Electron. Devices, 36(9) (1989) 1651-1656.
    • (1989) IEEE Trans. Electron. Devices , vol.36 , Issue.9 , pp. 1651-1656
    • Ortiz-Conde, A.1
  • 4
    • 49949134400 scopus 로고
    • Effects of diffusion current on characteristics of metal-oxide-semiconductor transistors
    • H.C. Pao and C.T. Sah, Effects of diffusion current on characteristics of metal-oxide-semiconductor transistors, Solid State Electron., 9 (1966) 927-937.
    • (1966) Solid State Electron. , vol.9 , pp. 927-937
    • Pao, H.C.1    Sah, C.T.2
  • 5
    • 0026926978 scopus 로고
    • Long-channel silicon-on-insulator MOSFET theory
    • A. Ortiz-Conde et al., Long-channel silicon-on-insulator MOSFET theory, Solid State Electron., 35(9) (1992) 1291-1298.
    • (1992) Solid State Electron. , vol.35 , Issue.9 , pp. 1291-1298
    • Ortiz-Conde, A.1
  • 6
  • 7
    • 0025484482 scopus 로고
    • Numerical and charge-sheet models for thin-film SOI MOSFETs
    • C. Mallikarjun and K.N. Bhat, Numerical and charge-sheet models for thin-film SOI MOSFETs, IEEE Trans. Electron. Devices, 37(9) (1990) 2039-2051.
    • (1990) IEEE Trans. Electron. Devices , vol.37 , Issue.9 , pp. 2039-2051
    • Mallikarjun, C.1    Bhat, K.N.2
  • 8
    • 0017932965 scopus 로고
    • Charge-sheet model of the MOSFET
    • J.R. Brews, Charge-sheet model of the MOSFET, Solid State Electron., 21 (1978) 345-355.
    • (1978) Solid State Electron. , vol.21 , pp. 345-355
    • Brews, J.R.1
  • 9
    • 0027589693 scopus 로고
    • Analysis of current-voltage characteristics of fully depleted SOI MOSFETs
    • P.C. Yang and S.S. Li, Analysis of current-voltage characteristics of fully depleted SOI MOSFETs, Solid State Electron., 36(5) (1993) 685-692.
    • (1993) Solid State Electron. , vol.36 , Issue.5 , pp. 685-692
    • Yang, P.C.1    Li, S.S.2
  • 10
    • 0018754251 scopus 로고
    • A long-channel MOSFET model
    • F. Van de Wiele, A long-channel MOSFET model, Solid State Electron., 22 (1979) 991-997.
    • (1979) Solid State Electron. , vol.22 , pp. 991-997
    • Van De Wiele, F.1
  • 12
    • 0020896948 scopus 로고
    • The MISIM-FET in the thin semiconductor layers: Depletion-approximation model of I-V characteristics
    • P.W. Barth, P.R. Apte and J.B. Angell, The MISIM-FET in the thin semiconductor layers: depletion-approximation model of I-V characteristics, IEEE Trans. Electron. Devices, ED-30(12) (1983) 1717-1725.
    • (1983) IEEE Trans. Electron. Devices , vol.ED-30 , Issue.12 , pp. 1717-1725
    • Barth, P.W.1    Apte, P.R.2    Angell, J.B.3
  • 13
    • 0027642287 scopus 로고
    • An improved analytical description of thin-film SOI MOSFET in the above-threshold region
    • M. Jurczak and A. Jakubowski, An improved analytical description of thin-film SOI MOSFET in the above-threshold region, Microelectronics Engineering, 22 (1993) 395-398.
    • (1993) Microelectronics Engineering , vol.22 , pp. 395-398
    • Jurczak, M.1    Jakubowski, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.