-
1
-
-
0021405436
-
Current-voltage characteristics of thin-film SOI MOSFETs in strong inversion
-
H. Lim and J.G. Fossum, Current-voltage characteristics of thin-film SOI MOSFETs in strong inversion, IEEE Trans. Electron. Devices, ED-31(4) (1984) 401-407.
-
(1984)
IEEE Trans. Electron. Devices
, vol.ED-31
, Issue.4
, pp. 401-407
-
-
Lim, H.1
Fossum, J.G.2
-
2
-
-
0026896303
-
Scaling the Si MOSFET: From bulk to SOI to bulk
-
R.H. Yan, A. Ourmazd and K.F. Lee, Scaling the Si MOSFET: from bulk to SOI to bulk, IEEE Trans. Electron. Devices, 39(7) (1992) 1704-1710.
-
(1992)
IEEE Trans. Electron. Devices
, vol.39
, Issue.7
, pp. 1704-1710
-
-
Yan, R.H.1
Ourmazd, A.2
Lee, K.F.3
-
3
-
-
0024732879
-
The nonequilibrium inversion layer charge of thin-film SOI MOSFET
-
A. Ortiz-Conde et al., The nonequilibrium inversion layer charge of thin-film SOI MOSFET, IEEE Trans. Electron. Devices, 36(9) (1989) 1651-1656.
-
(1989)
IEEE Trans. Electron. Devices
, vol.36
, Issue.9
, pp. 1651-1656
-
-
Ortiz-Conde, A.1
-
4
-
-
49949134400
-
Effects of diffusion current on characteristics of metal-oxide-semiconductor transistors
-
H.C. Pao and C.T. Sah, Effects of diffusion current on characteristics of metal-oxide-semiconductor transistors, Solid State Electron., 9 (1966) 927-937.
-
(1966)
Solid State Electron.
, vol.9
, pp. 927-937
-
-
Pao, H.C.1
Sah, C.T.2
-
5
-
-
0026926978
-
Long-channel silicon-on-insulator MOSFET theory
-
A. Ortiz-Conde et al., Long-channel silicon-on-insulator MOSFET theory, Solid State Electron., 35(9) (1992) 1291-1298.
-
(1992)
Solid State Electron.
, vol.35
, Issue.9
, pp. 1291-1298
-
-
Ortiz-Conde, A.1
-
7
-
-
0025484482
-
Numerical and charge-sheet models for thin-film SOI MOSFETs
-
C. Mallikarjun and K.N. Bhat, Numerical and charge-sheet models for thin-film SOI MOSFETs, IEEE Trans. Electron. Devices, 37(9) (1990) 2039-2051.
-
(1990)
IEEE Trans. Electron. Devices
, vol.37
, Issue.9
, pp. 2039-2051
-
-
Mallikarjun, C.1
Bhat, K.N.2
-
8
-
-
0017932965
-
Charge-sheet model of the MOSFET
-
J.R. Brews, Charge-sheet model of the MOSFET, Solid State Electron., 21 (1978) 345-355.
-
(1978)
Solid State Electron.
, vol.21
, pp. 345-355
-
-
Brews, J.R.1
-
9
-
-
0027589693
-
Analysis of current-voltage characteristics of fully depleted SOI MOSFETs
-
P.C. Yang and S.S. Li, Analysis of current-voltage characteristics of fully depleted SOI MOSFETs, Solid State Electron., 36(5) (1993) 685-692.
-
(1993)
Solid State Electron.
, vol.36
, Issue.5
, pp. 685-692
-
-
Yang, P.C.1
Li, S.S.2
-
10
-
-
0018754251
-
A long-channel MOSFET model
-
F. Van de Wiele, A long-channel MOSFET model, Solid State Electron., 22 (1979) 991-997.
-
(1979)
Solid State Electron.
, vol.22
, pp. 991-997
-
-
Van De Wiele, F.1
-
12
-
-
0020896948
-
The MISIM-FET in the thin semiconductor layers: Depletion-approximation model of I-V characteristics
-
P.W. Barth, P.R. Apte and J.B. Angell, The MISIM-FET in the thin semiconductor layers: depletion-approximation model of I-V characteristics, IEEE Trans. Electron. Devices, ED-30(12) (1983) 1717-1725.
-
(1983)
IEEE Trans. Electron. Devices
, vol.ED-30
, Issue.12
, pp. 1717-1725
-
-
Barth, P.W.1
Apte, P.R.2
Angell, J.B.3
-
13
-
-
0027642287
-
An improved analytical description of thin-film SOI MOSFET in the above-threshold region
-
M. Jurczak and A. Jakubowski, An improved analytical description of thin-film SOI MOSFET in the above-threshold region, Microelectronics Engineering, 22 (1993) 395-398.
-
(1993)
Microelectronics Engineering
, vol.22
, pp. 395-398
-
-
Jurczak, M.1
Jakubowski, A.2
|