Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 687-692

  Fiorenza, James G ^a,b   Del Alamo, Jesús A ^a,b  

^a IEEE   (United States)

^b USA   (United States)

Author keywords

Power MOSFET; Silicon on insulator (SOI) technology

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS;

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOADS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THIN FILMS;

MOSFET DEVICES;

EID: 0036538951     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992880     Document Type: Article

References (16)

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5. Record power added efficiency of bipolar power transistors for low voltage wireless applications
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7. Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET
8. A RF power LDMOS device on SOI
9. RF power LD-MOSFET on SOI
10. t of 6.9 GHz
11. A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers
12. A high-efficiency thin-film SOI power MOSFET having a self-aligned offset gate structure for multi-gigahertz applications
13. A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers
14. Power amplifiers on thin-film silicon-on-insulator (TFSOI) technology
15. Thin layer high-voltage junction FET (Resurf JFET)
16. An analytical breakdown model for short-channel MOSFETs