Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 640-647

  Ortiz Conde, Adelmo ^a   Sánchez, Francisco J García ^a   Muci, Juan ^a  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

Drain current model; Intrinsic channel; MOS compact modeling; Symmetric DG MOSFET; Undoped body MOS

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; DIFFUSION; DOPING (ADDITIVES); ELECTRIC CURRENTS; FERMI LEVEL; IMPURITIES; ITERATIVE METHODS; TRANSPORT PROPERTIES; VLSI CIRCUITS; VOLTAGE CONTROL;

DRAIN CURRENT MODEL; INTRINSIC CHANNEL; MOS COMPACT MODELING; SYMMETRIC DG MOSFET; UNDOPED BODY MOS;

MOSFET DEVICES;

EID: 13644258469     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.017     Document Type: Article

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