A general analytical solution to the one-dimensional undoped oxide-silicon-oxide system

Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest

Volumn , Issue , 2006, Pages 177-182

  Ortiz Conde, Adelmo ^a   Sánchez, Francisco J García ^a   Muci, Juan ^a   Malobabic, Slavica ^a  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

Intrinsic channel; MOS compact modeling; Single MOSFET; SOI; Undoped body MOS

Indexed keywords

ELECTRIC FIELD EFFECTS; ITERATIVE METHODS; MOS DEVICES; MOSFET DEVICES; NUMERICAL METHODS; SURFACE POTENTIAL;

INTRINSIC CHANNELS; MOS COMPACT MODELING; SINGLE MOSFET; UNDOPED BODY MOS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34250740379     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCDCS.2006.250857     Document Type: Conference Paper

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