A Continuous, Analytic Drain-Current Model for DG MOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 107-109

  Taur, Yuan ^a   Liang, Xiaoping ^a   Wang, Wei ^a   Lu, Huaxin ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Modeling; MOSFETs; Transistors

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; MATHEMATICAL MODELS; POISSON EQUATION; TRANSISTORS; VLSI CIRCUITS;

GATE OXIDE TUNNELING; QUASI-FERMI POTENTIAL;

MOSFET DEVICES;

EID: 1342286939     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822661     Document Type: Article

References (6)

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4. Y. Taur, "An analytical solution to a double-gate MOSFET with undoped body," IEEE Electron Device Lett., vol. 21, pp. 245-247, May 2000.
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6. Y. Taur, "Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 48, p. 2861, Dec. 2001.