Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 680-686

  Munteanu, Daniela ^a   Autran, Jean Luc ^a,b   Loussier, Xavier ^a   Harrison, Samuel ^a,c   Cerutti, Robin ^c   Skotnicki, Thomas ^c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Compact modelling; Double Gate MOSFET; Quantum effects; Short channel effects

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; MOSFET DEVICES; NUMERICAL ANALYSIS; SILICON; ULTRATHIN FILMS;

COMPACT MODELING; DOUBLE-GATE MOSFET; QUANTUM EFFECTS; SHORT-CHANNEL EFFECTS;

QUANTUM THEORY;

EID: 33646506150     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.038     Document Type: Article

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