A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 485-489

  Sallese, Jean Michel ^a   Krummenacher, François ^a   Prégaldiny, Fabien ^b   Lallement, Christophe ^b   Roy, A ^a   Enz, C ^a  

^a EPFL   (Switzerland)

^b Ecl Natl Sup De Phys De S   (France)

Author keywords

Double gate; EKV; MOSFET; Transconductance

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CHARGE; FERMI LEVEL; LOGIC GATES; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING SILICON; THIN FILMS; TRANSCONDUCTANCE;

DOUBLE GATE; EKV; GATE CHARGE DENSITY; NORMALIZATION;

MOSFET DEVICES;

EID: 12344336837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.013     Document Type: Article

References (12)

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