Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2861-2869

  Taur, Yuan ^a,b,c  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Charge carrier density; Inversion layers; MOS capacitors; MOSFETs

Indexed keywords

SILICON FILMS;

CAPACITANCE; CARRIER CONCENTRATION; CHARGE CARRIERS; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THIN FILMS;

MOSFET DEVICES;

EID: 0035694506     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974719     Document Type: Article

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