Drain current and transconductance model for the undoped body asymmetric double-gate MOSFET

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 1239-1242

  Ortiz Conde, Adelmo ^a   García Sánchez, Francisco J ^a   Malobabic, Slavica ^a   Muci, Juan ^a   Salazar, Ramón ^a  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; COMPUTER SIMULATION; DRAIN CURRENT; MATHEMATICAL MODELS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ASYMMETRIC DOUBLE GATE MOSFETS; CHARGE COUPLING VARIABLES; SINGLE ANALYTIC EQUATIONS; TRANSCONDUCTANCE MODELS;

MOSFET DEVICES;

EID: 34547372388     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306103     Document Type: Conference Paper

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