An analytic potential model for symmetric and asymmetric DG MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1161-1168

  Lu, Huaxin ^a   Taur, Yuan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Analytic potential model; Compact model; Double gate (DG) MOSFET

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; GATES (TRANSISTOR); POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS;

ANALYTIC POTENTIAL MODEL; COMPACT MODEL; CURRENT CONTINUITY EQUATION;

MOSFET DEVICES;

EID: 33646033169     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872093     Document Type: Article

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