Continuous analytic I-V model for surrounding-gate MOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 571-573

  Jimenez D ^a   Iniguez B ^b   Sune J ^a   Marsal, L F ^b   Pallares J ^b   Roig, J ^c   Flores, D ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); PERMITTIVITY; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CURRENT CONTINUITY EQUATION; DRAIN VOLTAGES; GATE VOLTAGES; SILICON FILM;

MOSFET DEVICES;

EID: 3943073828     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831902     Document Type: Article

References (7)

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