A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 124-127

  He, Jin ^a   Xi, Xuemei ^a   Lin Chung Hsun, ^a   Chan, Mansun ^b   Niknejad, Ali ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Compact modeling; Double gate; MOSFETs

Indexed keywords

COMPACT MODELING; DEVICE STRUCTURE; DOUBLE-GATE; NON-CHARGE-SHEET ANALYTICAL THEORY;

APPROXIMATION THEORY; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CHARGE; GATES (TRANSISTOR); POISSON DISTRIBUTION; SILICON; THICKNESS CONTROL; THIN FILMS;

MOSFET DEVICES;

EID: 6344282693     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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