Interfacial atomic structures, energetics and band offsets of Ge:ZrO 2 interfaces

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Tse, Koon Yiu ^a   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL ATOMIC STRUCTURE; FIELD EFFECT TRANSISTORS; GERMANIUM; PERMITTIVITY; SEMICONDUCTOR MATERIALS;

BAND OFFSETS; ELECTRONIC STATES; RELAXED STRUCTURES; VALENCE BONDING;

ZIRCONIUM COMPOUNDS;

EID: 33751089561     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2369645     Document Type: Article

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