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Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 191-196
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Electron states at the (1 0 0)Ge/HfO2 Interface
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Author keywords
Band offsets; Germanium; Interface barrier; Interface traps; Internal photoemission
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Indexed keywords
ANNEALING;
ELECTRON ENERGY LEVELS;
HAFNIUM COMPOUNDS;
INTERFACES (MATERIALS);
OXYGEN;
PHOTOEMISSION;
BAND OFFSETS;
INTERFACE BARRIERS;
INTERFACE TRAPS;
INTERNAL PHOTOEMISSION;
SEMICONDUCTING GERMANIUM;
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EID: 9544234497
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2004.09.085 Document Type: Conference Paper |
Times cited : (9)
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References (19)
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