Channel hot-electron degradation on 60-nm HfO2-Gated nMOSFET DC and RF performances

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1065-1072

  Yu, Chuanzhao ^a   Yuan, J S ^a   Suehle, John ^b  

^a University of Central Florida   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Flicker noise; Hafnium dioxide; High k dielectric; Linearity; Noise figure; RF; RF circuit reliability; S parameters

Indexed keywords

CHARGE CARRIERS; DIELECTRIC DEVICES; ELECTRONS; GATES (TRANSISTOR); SPURIOUS SIGNAL NOISE;

CHANNEL HOT-ELECTRON; CUTOFF FREQUENCY; HOT-ELECTRON DEGRADATION; HOT-ELECTRON EFFECT; NOISE FIGURE;

MOSFET DEVICES;

EID: 33646040708     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871837     Document Type: Article

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