A comprehensive model for breakdown mechanism in HfO2 high-κ gate stacks

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 725-728

  Ranjan, R ^a   Pey, K L ^a   Tung, C H ^b   Tang, L J ^a,b   Groeseneken, G ^c,d,e   Bera, L K ^b   De Gendt, S ^c,d,f  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e Microelectronic Engineering Department

^f Chemistry Department   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN; ELECTRIC FIELD STRENGTH; GATE DIELECTRICS; GATE STACKS; BREAKDOWN MECHANISM; COMPREHENSIVE MODELING; HFO2 DIELECTRIC; HIGH MECHANICAL STRENGTH; HIGH-K GATE STACKS; PHYSICAL ANALYSIS; POLYCRYSTALLINE; SELF-HEALING; THERMO-CHEMICAL REACTIONS;

ANNEALING; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MICROSTRUCTURE; MOSFET DEVICES; PERCOLATION (SOLID STATE); STRENGTH OF MATERIALS; CHEMICAL REACTIONS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; HAFNIUM OXIDES; LOGIC GATES; SOLVENTS;

GATES (TRANSISTOR); SILICON COMPOUNDS;

EID: 21644457127     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. R Ranjan et al., IEEE proc. of IRPS 2004, pg.347.
2. KL Pey et al., IEEE proc. of IRPS 2004, pg.117.
3. WL Scopel et al., Applied Physics Letters 2004, pg.1492.
4. MH Cho et al., Applied Physics Letters 2004, pg.1171.
5. M Gutowski et al., Applied Physics Letters 2002, pg.1897.
6. R Ranjan et al., IEEE proc. of IPFA 2004, pg. 53.
7. M Ono et al., IEEE Trans. of Electron Devices 51, 2004, pg.68.
8. MY Ho et al., Journal of Applied Physics 93, 2003, pg.1477.