RF Performance Vulnerability to Hot Carrier Stress and Consequent Breakdown in Low Power 90nm RFCMOS

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 181-184

  Pantisano, Luigi ^a   Schreurs, D ^b   Kaczer, B ^a   Jeamsaksiri, W ^a   Venegas, R ^a   Degraeve, R ^a   Cheung, K P ^c   Groeseneken, G ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE OXIDE BREAKDOWN (GOXBD); HOT CARRIER STRESS (HCS);

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HOT CARRIERS; MOSFET DEVICES; STRESSES;

CMOS INTEGRATED CIRCUITS;

EID: 0842266663     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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