High-frequency response of 100nm integrated CMOS transistors with high-K gate dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 231-234

  Barlage, Doug ^a   Arghavani, Reza ^a   Dewey, Gilbert ^a   Doczy, Mark ^a   Doyle, Brian ^a   Kavalieros, Jack ^a   Murthy, Anand ^a   Roberds, Brian ^a   Stokley, Pat ^a   Chau, Robert ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; FREQUENCY RESPONSE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; PERMITTIVITY; POLYSILICON; SILICA; TITANIUM NITRIDE; ZIRCONIA;

GATE DIELECTRICS; GATE LENGTH; HIGH FREQUENCY LOGIC APPLICATIONS;

CMOS INTEGRATED CIRCUITS;

EID: 2642523256     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)