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Volumn 4, Issue 4, 2004, Pages 696-703

Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

Author keywords

Gate leakage current; Gate stacks; High K dielectrics; Reliability; Tunneling

Indexed keywords

GATE LEAKAGE CURRENTS; GATE STACKS; HIGH-K DIELECTRICS; TUNNELING;

EID: 13444309342     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.838416     Document Type: Article
Times cited : (15)

References (15)
  • 6
    • 0035714335 scopus 로고    scopus 로고
    • 2 and HfAlO for CMOS: Thermal stability and current transport
    • 2 and HfAlO for CMOS: Thermal stability and current transport," in IEDM Tech. Dig., 2001, p. 463.
    • (2001) IEDM Tech. Dig. , pp. 463
    • Zhu, W.1    Ma, T.P.2
  • 12
    • 0033281224 scopus 로고    scopus 로고
    • Quantum effect in oxide thickness determination from capacitance measurement
    • Kyoto, Japan, June 14-16
    • K. Yang, Y.-C. King, and C. Hu, "Quantum effect in oxide thickness determination from capacitance measurement," in Proc. VLSI Technology Symp., Kyoto, Japan, June 14-16, 1999, pp. 77-78.
    • (1999) Proc. VLSI Technology Symp. , pp. 77-78
    • Yang, K.1    King, Y.-C.2    Hu, C.3
  • 13
    • 0033332633 scopus 로고    scopus 로고
    • The metal gate MOS reliability with improved sputtering process for gate electrode
    • T. Yamada, M. Moriwaki, Y. Harada, S. Fujii, and K. Eriguchi, "The metal gate MOS reliability with improved sputtering process for gate electrode," in IEDM Tech. Dig., 1999, pp. 319-322.
    • (1999) IEDM Tech. Dig. , pp. 319-322
    • Yamada, T.1    Moriwaki, M.2    Harada, Y.3    Fujii, S.4    Eriguchi, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.