A Study of Relaxation Current in High-κ Dielectric Stacks

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 402-408

  Xu, Zhen ^a   Pantisano, Luigi ^a   Kerber, Andreas ^a   Degraeve, Robin ^a   Cartier, Eduard ^a   De Gendt, Stefan ^a   Heyns, Marc ^a   Groeseneken, Guido ^a  

^a IMEC   (Belgium)

Author keywords

Charge trapping; CMOS integrated circuits; Dielectric thin films; Electron trapping; Integrated circuit (IC) reliability; SiO2 Al 2O3 dielectric stacks; SiO2 HfO2 dielectric stacks

Indexed keywords

ALUMINA; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRIC CURRENTS; ELECTRON TRAPS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOS CAPACITORS; SEMICONDUCTOR DEVICE MODELS; SILICA; THIN FILM CIRCUITS; VOLTAGE MEASUREMENT;

DIELECTRIC POLARIZATION; DIELECTRIC RELAXATION CURRENTS; DIELECTRIC THIN FILMS; SIO2/AL2O3 DIELECTRIC STACKS; SIO2/HFO2 DIELECTRIC STACKS;

DIELECTRIC RELAXATION;

EID: 1642398973     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822343     Document Type: Article

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