Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 429-430

  Lu, Qiang ^a   Takeuchi, Hideki ^a   Lin, Ronald ^a   King, Tsu Jae ^a   Hu, Chenming ^a   Onishi, Katsunori ^a   Choi, Rino ^a   Kang, Chang Seok ^a   Lee, Jack C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Hafnium oxide; Hot carrier; Silicon nitride interface

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; POLYSILICON; RELIABILITY; SUBSTRATES;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0036084779     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)