Area dependence of TDDB characteristics for HfO2 gate dielectrics

IEEE Electron Device Letters

Volumn 23, Issue 10, 2002, Pages 594-596

  Kim, Young Hee ^b   Onishi, Katsunori ^a,b   Kang, Chang Seok ^b   Cho, Hag Ju ^b   Nieh, Renee ^b   Gopalan, Sundar ^b   Choi, Rino ^b   Han, Jeong ^b   Krishnan, Siddarth ^b   Lee, Jack C ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

Gate dielectric; HfO2; MOS capacitor; Reliability; TDDB

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS CAPACITORS; PERMITTIVITY; RELIABILITY; WEIBULL DISTRIBUTION;

GATE DIELECTRICS; HAFNIUM OXIDE; WEIBULL SLOPE;

DIELECTRIC MATERIALS;

EID: 18644367764     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.803751     Document Type: Article

References (12)

1. 2 high-K dielectrics," in IEDM Tech. Dig., 2000, pp. 35-38.
2. 2 MOSFET's," in IEDM Tech. Dig., 2001, pp. 659-662.
3. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides," in IEDM Tech. Dig., 1995, pp. 863-866.
4. M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, "Model for the current-voltage characteristics of ultrathin gate oxide after soft break-down," J. Appl. Phys., vol. 84, pp. 4351-4355, 1998.
5. J. H. Stathis and D. J. DiMaria, "Reliability projection for ultra-thin oxides at low voltage," in IEDM Tech. Dig., 1998, pp. 167-170.
6. J. H. Stathis, "Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits," in Proc. IRPS, 2001, pp. 132-149.
7. T. Nigam, R. Degraeve, G. Groeseneken, M. M. Heyns, and H. E. Maes, "Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures?," in Proc. IRPS, 1998, pp. 62-69.
8. F. Monsieur, E. Vincent, D. Roy, S. Bruyere, J. C. Vildeuil, G. Pananakakis, and G. Ghibaudo, "A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assesment," in Proc. IRPS, 2002, pp. 45-54.
9. J. Sune, E. Y. Wu, D. Jimbez', R. P. Vollertsen, and E. Miranda, "Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway," in IEDM Tech. Dig., 2001, pp. 117-120.
10. 2 stack," In IEDM Tech. Dig., 1999, pp. 327-330.
11. 2/Si interfaces on nitrided and un-nitrided Si(100)," J. Appl. Phys., vol. 91, pp. 4353-4363, 2002.
12. D. K. Cheng, Fundamentals of Engineering Electromagnetics. Reading, MA: Addison-Wesley, 1993, p. 114.