Dielectric relaxation and breakdown detection of doped tantalum oxide high-k thin films

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 488-493

  Luo, Wen ^a   Kuo, Yue ^b   Kuo, Way ^a  

^a University of Tennessee Knoxville   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Dielectric relaxation; High k dielectric; Thin film breakdown

Indexed keywords

DIELECTRIC FILMS; DIELECTRIC RELAXATION; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; THIN FILMS;

GATE DIELECTRICS; HIGH-K DIELECTRICS; STRESS TESTING; THIN FILM BREAKDOWN;

TANTALUM COMPOUNDS;

EID: 11144228299     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.836161     Document Type: Article

References (24)

1. Y. Kuo, J. Lu, and J.-Y. Tewg, "Tantalum nitride interface layer influence on dielectric properties of Hafnium doped tantalum oxide high dielectric constant thin films," Jpn. J. Appl. Phys., vol. 42, no. 7A, p. L769, 2003.
2. Y. Kuo, J. Lu, P. C. Liu, F. M. Daby, and J.-Y. Tewg, "Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics," in 2002 IEEE Nanotech Symp. Proc., 2002. p. 251.
3. Y. Kuo, J.-Y. Tewg, J. Donnelly, and J. Lu, "Dopant effects on TaOx-based high-k dielectric films," in ECS Proc. Semiconductor Technology Conf., vol. 17, 2001, p. 324.
4. 2," in Appl. Phys. Lett., vol. 69, 1996, p. 2728.
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High k gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, p. 5243, 2001.
6. A. K. Jonscher, "Dielectric relaxation in solids," J. Phys. D: Appl. Phys., vol. 32, p. 57, 1999.
7. 5 thin films," J. Appl. Phys., vol. 88, no. 2, p. 850, 2000.
8. M. Schumacher and R. Waser, "Curie-von Schweidler behavior observed in ferroelectric thin films and comparison to superparaelectric thin film materials," Integral. Ferroelectr., vol. 22, p. 109, 1998.
9. H. Reisinger et al., "A comparative study of dielectric relaxation losses in alternative dielectrics," in IEDM Tech. Dig., 2001, p. 267.
10. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, "Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering," J. Appl. Phys., vol. 90, no. 9, p. 4587, 2001.
11. W. D. Westwood, N. Waterhouse, and P. S. Wilcox, Tantalum Thin Films. New York: Academic, 1975.
12. 5 layers on Si for high density DRAMS," Microelectron. Reliabil., vol. 42, p. 157, 2002.
13. 5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications," J. Appl. Phys., vol. 85, no. 8, p. 4087, 1999.
14. 2 by means of a scanning electron microscope technique," J. Appl. Phys., vol. 74, no. 2, p. 1250, 1993.
15. K.-M. Chang, C.-H. Li, S.-W. Wang, T.-H. Yeh, J.-Y. Yang, and T.-C. Lee, "The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress," IEEE Trans. Electron Devices, vol. 45, p. 1684, Aug. 1998.
16. D. J. Dumin and J. R. Maddux, "Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides," IEEE Trans. Electron Devices, vol. 40, p. 986, May 1993.
17. D. J. DiMaria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl Phys., vol. 73, no. 7, p. 3367, 1993.
18. C. L. Gressus and G. Blaise, "Breakdown phenomena related to trapping.detrapping processes in wide band gap insulators," IEEE Trans. Electr. Ins., vol. 27, no. 3, p. 472, 1992.
19. J. S. Suehle, "Reliability characterization of ultra-thin film dielectrics," in Int. Conf. Characterization and Metrology for VLSI Technology, 1998, p. 115.
20. A. Martin, P. O'Sullivan, and A. Mathewson, "Dielectric reliability measurement methods: A review," Microelectron. Reliabil, vol. 38, no. 1, p. 37, 1998.
21. "JESD35-A: Procedure for the Wafer-Level Testing of Thin Dielectrics," JESD Solid State Technology Association, Arlington, VA, 2001.
22. R. Degraeve, B. Kaczer, and G. Groeseneken, "Reliability: A possible showstopper for oxide thickness scaling?," Semicond. Sci. Technol., vol. 15, p. 436. 2000.
23. W. Kuo, W. K. Chien, and T. Kim, Reliability, Yield, and Stress Burn-in: A Unified Approach for Microelectronics Systems Manufacturing and Software Development. Boston, MA: Kluwer, 1998.
24. W. Kuo and T. Kim, "An overview of manufacturing yield and reliability modeling for semiconductor products," Proc. IEEE, vol. 87, no. 8, p. 1329, 1999.