Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 411-414

  Soukhoveev, V ^a   Ivantsov, V ^a   Melnik, Yu ^a   Davydov, A ^b   Tsvetkov, D ^a   Tsvetkova, K ^a   Nikitina, I ^c   Zubrilov, A ^c   Lavrentiev, A ^c   Dmitriev, V ^a  

^a TDI Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Crystal Growth Research Center   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2942654007     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<411::AID-PSSA411>3.0.CO;2-8     Document Type: Article

References (3)

1. V. SOUKHOVEEV et al., International Specialist Meeting on Bulk Nitride Growth and Related Techniques, November 2000, Brazil.
2. V. A. SUKHOVEYEV et al., Mater. Res. Soc. Symp. Proc. 595, W6.6.1 (1999).
3. M. ALBRECHT et al., "Structure and optical properties of GaN crystals grown from the liquid phase", Fall MRS 2000, Boston.